bav300, bav301, bav302, bav303 www.vishay.com vishay semiconductors rev. 2.1, 01-aug-12 1 document number: 85545 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal switching diodes, high voltage mechanical data case: micromelf weight: approx. 12 mg cathode band color: black packaging codes/options: tr3/10k per 13" reel (8 mm tape), 10k/box tr/2.5k per 7" reel (8 mm tape), 12.5k/box features ? silicon epitaxial planar diodes ? saving space ? hermetic sealed parts ? fits onto sod-323/sot-23 footprints ? electrical data identical with the devices bav100 to bav103, bav200 to bav203 ? aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? general purposes parts table part type differentiati on ordering code internal construction remarks bav300 v rrm = 60 v BAV300-TR3 or BAV300-TR single diode tape and reel bav301 v rrm = 120 v bav301-tr3 or bav301-tr single diode tape and reel bav302 v rrm = 200 v bav302-tr3 or bav302-tr single diode tape and reel bav303 v rrm = 250 v bav303-tr3 or bav303-tr single diode tape and reel absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit repetitive peak reverse voltage bav300 v rrm 60 v bav301 v rrm 120 v bav302 v rrm 200 v bav303 v rrm 250 v reverse voltage bav300 v r 50 v bav301 v r 100 v bav302 v r 150 v bav303 v r 200 v forward continuous current i f 250 ma peak forward surge current t p = 1 s, t j = 25 c i fsm 1a forward peak current f = 50 hz i fm 625 ma
bav300, bav301, bav302, bav303 www.vishay.com vishay semiconductors rev. 2.1, 01-aug-12 2 document number: 85545 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit thermal resistance junction to ambient air mounted on epoxy-glass hard tissue, fig. 4 35 m copper clad, 0.9 mm 2 copper area per electrode r thja 500 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit forward voltage i f = 100 ma v f 1000 mv reverse current v r = 50 v bav300 i r 100 na v r = 100 v bav301 i r 100 na v r = 150 v bav302 i r 100 na v r = 200 v bav303 i r 100 na t j = 100 c, v r = 50 v bav300 i r 15 a t j = 100 c, v r = 100 v bav301 i r 15 a t j = 100 c, v r = 150 v bav302 i r 15 a t j = 100 c, v r = 200 v bav303 i r 15 a breakdown voltage i r = 100 a, t p /t = 0.01, t p = 0.3 ms bav300 v (br) 60 v bav301 v (br) 120 v bav302 v (br) 200 v bav303 v (br) 250 v diode capacitance v r = 0 v, f = 1 mhz c d 1.5 pf differential forward resistance i f = 10 ma r f 5 ? reverse recovery time i f = i r = 30 ma, i r = 3 ma, r l = 100 ? t rr 50 ns
bav300, bav301, bav302, bav303 www.vishay.com vishay semiconductors rev. 2.1, 01-aug-12 3 document number: 85545 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - reverse current vs. junction temperature fig. 2 - forward current vs. forward voltage fig. 3 - differential forward resistance vs. forward current fig. 4 - board for r thja definition (in mm) 0 40 80 120 160 0.01 0.1 1 10 1000 i-re v erse c u rrent (a) r t j -j u nction temperat u re (c) 200 94 9084 100 scattering limit v r = v rrm 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 i-for w ard c u rrent (ma) f v f -for w ard voltage (v) 2.0 94 9085 scattering limit t j = 25 c 0.1 1 10 1 10 100 1000 r - differential for w ard resistance ( ) f i f - for w ard c u rrent (ma) 100 94 9089 t j = 25 c 25 2.5 10 0.71 1.3 1.27 9.9 24 0.152 0.355 95 10329
bav300, bav301, bav302, bav303 www.vishay.com vishay semiconductors rev. 2.1, 01-aug-12 4 document number: 85545 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): micromelf cathode indification s u rface plan 1 (0.039) glass glass s u rface plan 2 (0.079) 1.8 (0.071) 0.25 (0.010) 0.15 (0.006) 1.2 (0.047) 1.1 (0.043) > r2.5 (0.098) < 1.35 ( 0.053) 0.6 (0.024 ) foot print recommendation: reflo w soldering wa v e soldering 2.4 (0.094) 2.8 (0.110) 0.8 (0.031) 0.8 (0.031) 0.9 (0.035) 0.9 (0.035) 1.2 (0.047) 0.8 (0.031) 1.4 (0.055) 1 (0.039) doc u ment no.:6.560-5007.01-4 re v . 13 - date: 07.j u ne.2006 96 12072 created - date: 26.j u ly.1996 * * the gap bet w een pl u g and glass can be either on cathode or anode side
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